Dopant implanting method and doping apparatus

A dopant injecting method for doping a semiconductor melt with germanium (Ge), the dopant injecting method comprising:

• loading the Ge in a solid state into a doping device including:
• a dopant holder that holds the Ge which is solid at normal temperature and liquefies the Ge near a surface of the semiconductor melt, the dopant holder including an elongated communicating hole for delivering the liquefied Ge downwardly;
• a cover portion for covering the Ge held by the dopant holder;
• and a conduit tube provided below the dopant holder to deliver the liquefied Ge flowed from the communicating hole to the surface of the semiconductor melt;
• liquefying the Ge in the solid state loaded into the doping device while holding the doping device at a predetermined height from the surface of the semiconductor melt;
• and
• doping the semiconductor melt with the liquefied Ge flowed through the conduit tube from the communicating hole,
• wherein the conduit tube is soaked in the semiconductor melt in at least one of the liquefying of the Ge and the doping of the semiconductor melt with the liquefied Ge.

A doping device for doping a semiconductor melt with germanium (Ge), the doping device comprising:

• a dopant holder that holds the Ge which is solid at normal temperature and liquefies the Ge near a surface of the semiconductor melt, the dopant holder including a communicating hole for delivering the liquefied Ge downwardly;
• a cover portion for covering the Ge held by the dopant holder;
• and
• a conduit tube provided below the dopant holder to deliver the liquefied Ge flowed from the communicating hole to the surface of the semiconductor melt,
• wherein the communicating hole has an elongated shape.