Method of manufacturing semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorSatoru Mihara
Life of this patent
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Abstract
A method of manufacturing a semiconductor device including a plurality of capacitors each of which has bottom electrode, dielectric layer, and top electrode includes stacking a bottom electrode layer, a dielectric layer and an top electrode layer, patterning the top electrode layer to form a plurality of top electrodes arranged in a column, forming a mask pattern that covers the plurality of top electrodes and leaves an end part of the outermost top electrode of the arrangement of the plurality of top electrodes exposed, and patterning the dielectric layer using the mask pattern.
Claims8
A method of manufacturing a semiconductor device comprising a plurality of capacitors each of which has bottom electrode, dielectric layer, and top electrode, comprising:
- stacking a bottom electrode layer, a dielectric layer and an top electrode layer;
- patterning said top electrode layer to form a plurality of top electrodes arranged in a column;
- forming a mask pattern that covers said plurality of top electrodes and leaves an end part of the outermost top electrode of the arrangement of said plurality of top electrodes exposed;
- and
- patterning said dielectric layer using said mask pattern.
A method of manufacturing a semiconductor device comprising a plurality of capacitors each of which has bottom electrode, dielectric layer, and top electrode, comprising:
- stacking a bottom electrode layer, a dielectric layer and an top electrode layer;
- patterning said top electrode layer to form a plurality of top electrodes arranged in a column;
- forming a mask for a bottom electrode including a first mask that covers a first top electrode located at the outermost end of said plurality of top electrodes and a second mask that is separated from said first mask and covers a plurality of second top electrodes, which are said plurality of top electrodes excluding said first top electrodes;
- and
- patterning said bottom electrode layer using said bottom electrode mask to form said bottom electrode.
Dependencies are inferred from the claim text.