Fabrication method of self-aligned trenched power semiconductor structure
OwnerChun Ying Yehinventor
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Abstract
A fabrication method of a self-aligned power semiconductor structure is provided. Firstly, a trenched polysilicon gate is formed in a silicon substrate. Then, a self-aligned polysilicon extending structure is formed on the trenched polysilicon gate. A width of the self-aligned polysilicon extending structure is smaller than that of the trenched polysilicon gate. Thereafter, the self-aligned polysilicon extending structure is oxidized to form a silicon oxide protruding structure on the trenched polysilicon gate. Then, a first spacer is formed on a sidewall of the silicon oxide protruding structure to define a source contact window.
Claims13
A fabrication method of a self-aligned power semiconductor structure, comprising the steps of:
- forming a trenched polysilicon gate in a silicon substrate;
- forming a self-aligned polysilicon extending structure, extended upward from the trenched polysilicon gate, a width of the self-aligned polysilicon extending structure being smaller than that of the trenched polysilicon gate;
- oxidizing the self-aligned polysilicon extending structure to form a silicon oxide protruding structure on the trenched polysilicon gate;
- and
- forming a first spacer on a sidewall of the silicon oxide protruding structure to define a source contact window.
Dependencies are inferred from the claim text.