Method for manufacturing semiconductor memory device
AssigneeElpida Memory, Inc.
InventorsToshiyuki Hirota, Takakazu Kiyomura
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Abstract
In a method for manufacturing a semiconductor memory device, a three dimensional lower electrode including a titanium nitride film is formed on a semiconductor substrate, and a dielectric film is formed on the surface of the lower electrode. After a first upper electrode is formed at a temperature that the crystal of the dielectric film is not grown on the surface of the dielectric film, the first upper electrode and the dielectric film are heat-treated at a temperature that the crystal of the dielectric film is grown to convert at least a portion of the dielectric film into a crystalline state. Thereafter, a second upper electrode is formed on the surface of the first upper electrode.
Claims20
A method for manufacturing a semiconductor memory device including a capacitor, comprising:
- forming a lower electrode made of a titanium nitride film above a semiconductor substrate;
- forming a dielectric film on the lower electrode;
- and
- forming an upper electrode including a titanium nitride film on the dielectric film,
- wherein at least the dielectric film contacting with the upper electrode is formed by atomic layer deposition (ALD) at a first temperature,
- a first titanium nitride film is formed in contact with the dielectric film at a second temperature that is greater than the first temperature by not more than 70° C.,
- in forming the upper electrode, the first titanium nitride film is converted into a first upper electrode including a first polycrystalline titanium nitride film by a heat treatment, and a second upper electrode including a polycrystalline titanium nitride film is formed on a surface of the first upper electrode.
Dependencies are inferred from the claim text.