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US 8,283,223 B2Granted
Method of manufacturing semiconductor device and semiconductor device
AssigneeRenesas Electronics Corporation
InventorToshiyuki Iwamoto
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device includes: forming a gate insulating film over a semiconductor substrate; forming a mask that has an opening at a position corresponding to the gate insulating film formed in an NMOSFET forming region and covers the gate insulating film; forming a first metal layer over the gate insulating film disposed in the NMOSFET forming region and the mask formed in a PMOSFET forming region; and performing a heat treatment to thermally diffuse a metal material forming the first metal layer into the gate insulating film formed in the NMOSFET forming region.
Claims9
A method of manufacturing a semiconductor device including a first-conduction-type MOSFET and a second-conduction-type MOSFET over a semiconductor substrate, comprising:
- forming a gate insulating film in a first-conduction-type MOSFET forming region and a second-conduction-type MOSFET forming region of said semiconductor substrate;
- forming a hard mask that has an opening at a position corresponding to said gate insulating film formed in said first-conduction-type MOSFET forming region and covers said gate insulating film formed in said second-conduction-type MOSFET forming region;
- forming a first metal layer over said gate insulating film disposed in said first-conduction-type MOSFET forming region and said hard mask formed in said second-conduction-type MOSFET forming region;
- performing a heat treatment to thermally diffuse a metal material forming said first metal layer into said gate insulating film formed in said first-conduction-type MOSFET forming region;
- removing said remaining first metal layer from said first-conduction-type MOSFET forming region and said second-conduction-type MOSFET forming region;
- removing said hard mask from said second-conduction-type MOSFET forming region;
- forming a second metal layer that is made of a metal material different from that forming said first metal layer over said gate insulating film in said first-conduction-type MOSFET forming region and said second-conduction-type MOSFET forming region of said semiconductor substrate, said second metal layer being part of gate electrodes of said first-conduction-type MOSFET and said second-conduction-type MOSFET;
- and
- forming a silicon layer over said second metal layer, said silicon layer being part of said gate electrodes of said first-conduction-type MOSFET and said second-conduction-type MOSFET,
- wherein said forming said gate insulating film includes:
- forming a first insulating film;
- and
- forming a second insulating film with a dielectric constant greater than that of said first insulating film,
- wherein said forming said hard mask includes:
- forming a film that is made of the same material as that forming said hard mask over the entire surface of said gate insulating film in said first-conduction-type MOSFET forming region and said second-conduction-type MOSFET forming region;
- forming a resist so as to cover the entire surface of said film;
- forming an opening in said resist in said first-conduction-type MOSFET forming region to expose said film;
- removing said film exposed from said opening of said resist to expose said gate insulating film in said first-conduction-type MOSFET forming region;
- and
- removing said resist using a wet process.
17 more elements
A method of manufacturing a semiconductor device including a first-conduction-type MOSFET and a second-conduction-type MOSFET over a semiconductor substrate, comprising:
- forming a gate insulating film in a first-conduction-type MOSFET forming region and a second-conduction-type MOSFET forming region of said semiconductor substrate;
- forming a hard mask that has an opening at a position corresponding to said gate insulating film formed in said first-conduction-type MOSFET forming region and covers said gate insulating film formed in said second-conduction-type MOSFET forming region;
- forming a first metal layer over said gate insulating film disposed in said first-conduction-type MOSFET forming region and said hard mask formed in said second-conduction-type MOSFET forming region;
- performing a heat treatment to thermally diffuse a metal material forming said first metal layer into said gate insulating film formed in said first-conduction-type MOSFET forming region;
- removing a remainder of said first metal layer from said first-conduction-type MOSFET forming region and said second-conduction-type MOSFET forming region;
- removing said hard mask from said second-conduction-type MOSFET forming region;
- forming a second metal layer that is made of a metal material different from that forming said first metal layer over said gate insulating film in said first-conduction-type MOSFET forming region and said second-conduction-type MOSFET forming region of said semiconductor substrate, said second metal layer being part of gate electrodes of said first-conduction-type MOSFET and said second-conduction-type MOSFET, wherein said second metal layer is made of at least one metal selected from a group including TiN, W, TaN, TaSiN, Ru, TiAl, and Al;
- and
- forming a silicon layer over said second metal layer, said silicon layer being part of said gate electrodes of said first-conduction-type MOSFET and said second-conduction-type MOSFET,
- wherein said forming said gate insulating film includes:
- forming a first insulating film;
- and
- forming a second insulating film with a dielectric constant greater than that of said first insulating film,
- wherein said forming said hard mask includes:
- forming a film that is made of the same material as that forming said hard mask over the entire surface of said gate insulating film in said first-conduction-type MOSFET forming region and said second-conduction-type MOSFET forming region;
- forming a resist so as to cover the entire surface of said film;
- forming an opening in said resist in said first-conduction-type MOSFET forming region to expose said film;
- removing said film exposed from said opening of said resist to expose said gate insulating film in said first-conduction-type MOSFET forming region;
- and
- removing said resist using a wet process.
17 more elements
Dependencies are inferred from the claim text.