Production methods of a patterned thin film, semiconductor element, and circuit substrate using fluid resist material

Abstract

A production method of a semiconductor element having a channel includes forming a resist pattern film on a thin film formed on a substrate, and pattering the thin film by etching. The production method also includes forming a second resist pattern film by applying a fluid resist material inside a channel groove after channel etching or inside a resist groove formed above a channel region before channel etching. The production method may also include forming a gate electrode, a gate insulating film, a semiconductor film, and a conductive film on an insulating substrate. The method may include applying the fluid resist material inside the channel groove, thereby forming the second resist pattern film, and patterning the semiconductor film using at least the second resist pattern film.

Dependencies are inferred from the claim text.