Optical proximity correction process
AssigneeUnited Microelectronics Corp.
InventorsTe-Hsien Hsieh, Jing-Yi Lee
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AssigneeUnited Microelectronics Corp.
InventorsTe-Hsien Hsieh, Jing-Yi Lee
Estimating the term…
An optical proximity correction process for designing a mask according to a target exposure intensity of each edge of a pattern is provided. Each edge is at a corresponding current edge position which corresponds to a current exposure intensity. The process comprises repeating a convergence process on each edge to determine an adjusted position for the edge until an adjusted exposure intensity of the edge is equal to the target exposure intensity. For each edge, the convergence process comprises comparing the target exposure intensity with the current exposure intensity to determine an in-position correlating to a first exposure intensity and an out-position correlating to a second exposure intensity, wherein the target exposure intensity is within a range between the first and the second exposure intensities. An interpolation is performed to obtain the adjusted position according to the target exposure intensity. The pattern is updated according to the adjusted position.
An optical proximity correction process for designing a mask with a pattern, wherein the pattern has a plurality of edges, the mask with the pattern is designed according to a target exposure intensity of each of the edges, each of the edges is at a corresponding current edge position on the mask and each current edge position corresponds to a current exposure intensity, the optical proximity correction process comprising:
An optical proximity correction process for designing a mask with a pattern, wherein the pattern has a plurality of edges, the mask with the pattern is designed according to a target exposure intensity of each of the edges, the optical proximity correction process comprising:
Dependencies are inferred from the claim text.