Back to results
US 8,282,844 B2Granted
Method for etching metal nitride with high selectivity to other materials
AssigneeTokyo Electron Limited
InventorsAkiteru Ko, Hiroyuki Takahashi, Masayuki Sawataishi
Life of this patent
Estimating the term…
Abstract
A method and system of etching a metal nitride, such as titanium nitride, is described. The etching process comprises introducing a process composition having a halogen containing gas, such as Cl2, HBr, or BCl3, and a hydrocarbon gas having the chemical formula CxHy, where x and y are equal to unity or greater.
Claims14
A method of etching a metal containing layer on a substrate, comprising:
- disposing said substrate having a titanium nitride layer in a plasma processing system;
- elevating the temperature of said substrate above approximately 30 degrees C.;
- introducing a process composition consisting of Cl2, CH4, and an optional noble gas to said plasma processing system;
- forming plasma from said process composition in said plasma processing system;
- and
- exposing said substrate to said plasma in order to etch said titanium nitride layer.
3 more elements
Dependencies are inferred from the claim text.