High uniformity boron doped diamond material
AssigneeElement Six Limited
InventorGeoffrey Alan Scarsbrook
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Abstract
The present invention relates to diamond material comprising a boron doped single crystal diamond substrate layer having a first surface and a boron doped single crystal diamond conductive layer on said first surface, wherein the distribution of boron in the conductive layer is more uniform than the distribution of boron in the substrate layer.
Claims13
Diamond material comprising a boron doped single crystal diamond substrate layer having a first surface and a boron doped single crystal diamond conductive layer on said first surface, wherein the distribution of boron in the conductive layer is more uniform than the distribution of boron in the substrate layer,
- wherein the average concentration of boron in the conductive layer is in a range from 1×1018 atoms/cm3 to 8×1021 atoms/cm3,
- wherein the average concentration of boron in the boron doped single crystal diamond substrate layer is in a range from 1×1018 atoms/cm3 to 8×1021 atoms/cm3, and
- wherein the conductive layer is CVD diamond and has a thickness of 100 μm or less.
Dependencies are inferred from the claim text.