High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device

A method of bonding substrates, comprising the steps of:

• applying a high-temperature bonding composition to a substrate to form a bond layer precursor coating,
• joining another substrate to the one substrate so as to sandwich the bond layer precursor coating therebetween, and
• heat curing the bond layer precursor coating to bond the substrates together,
• the high-temperature bonding composition comprising a silicon base polymer as a thermosetting binder, wherein
• said silicon base polymer is obtained from dehydrolytic condensation of a condensate precursor or a mixture thereof, said condensate precursor comprising a silane compound having at least one pair of silicon atoms tied by a crosslink composed of an optionally cyclic structure-containing straight or branched, or cyclic aliphatic hydrocarbon group of 1 to 10 carbon atoms, a heterocycle-containing group of 4 or 8 carbon atoms, or an aromatic ring-containing hydrocarbon group of 6 to 12 carbon atoms, the silane compound having at least three hydroxyl groups and/or hydrolyzable groups, and
• those silicon atoms having a direct bond to the crosslink composed of the aliphatic hydrocarbon group, the heterocycle-containing group or the aromatic ring-containing hydrocarbon group are present in a proportion of at least 90 mol % relative to all silicon atoms in said silicon base polymer.