Memory and operating method thereof

A method of reading data stored in a memory, the memory comprising an information block, a user-defined block and a manufacture-defined block, the method comprising steps of:

• obtaining a read address;
• reading the information block in the memory to obtain a programming address, which points to the user-defined block, and a replacing address, wherein the user-defined block pointed by the programming address in the information block is already programmed and cannot be erased;
• determining whether the read address corresponds to the programming address;
• and
• reading the manufacture-defined block to obtain the data corresponding to the read address if the read address corresponds to the programming address, wherein,
• the manufacture-defined block is implemented with one of a replacing cell row and a replacing cell column, and the manufacture-defined block and the user-defined block have a same matrix size;
• and
• the manufacture-defined blocks and the user-defined blocks are implemented with one time programmable (OTP) memory blocks.

A memory, comprising:

• a memory array, comprising a manufacture-defined block, an information block, and a user-defined block;
• and
• a logic circuit, for receiving a programming address pointing to the user-defined block and programming data, determining whether the user-defined block is already programmed, and when the user-defined block is already programmed, providing a replacing address pointing to the manufacture-defined block for storing the programming data, wherein,
• the manufacture-defined block is implemented with one of a replacing cell row and a replacing cell column, and the manufacturer-defined block and the user-defined block have a same matrix size.