Nonvolatile semiconductor memory device and nonvolatile semiconductor memory system
AssigneeKabushiki Kaisha Toshiba
InventorsYoshikazu Harada, Norihiro Fujita, Masaki Fujiu
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Abstract
A nonvolatile semiconductor memory device and a nonvolatile memory system having a unit which suppresses erroneous reading of a nonvolatile semiconductor memory device of a multi-level memory system are provided. In the nonvolatile semiconductor memory device and the nonvolatile memory system of the multi-level memory system, a first verify voltage is used when data is written before a packaging process, and the verify voltage is switched to a second verify voltage lower than the first verify voltage when data is written after the packaging process.
Claims5
A nonvolatile semiconductor memory device comprising:
- a memory cell array in which plural electrically rewritable nonvolatile memory cells are arranged;
- a voltage generation unit which generates plural voltages including a writing voltage and a verify voltage each of which is applied to the nonvolatile memory cell;
- and
- a control circuit which switches the verify voltage, wherein
- a first verify voltage is used when writing is carried out to the nonvolatile memory cell before a thermal process, and
- a second verify voltage lower than the first verify voltage is used when writing is carried out to the nonvolatile memory cell after the thermal process.
A nonvolatile memory system comprising:
- a memory cell array in which plural electrically rewritable nonvolatile memory cells are arranged;
- a voltage generation unit which generates plural voltages including a writing voltage and a verify voltage each of which is applied to the nonvolatile memory cell;
- a control circuit which switches the verify voltage;
- and
- a controller which inputs an external signal into the memory cell array, wherein
- a first verify voltage is used when writing is carried out to the nonvolatile memory cell before a thermal process, and
- a second verify voltage lower than the first verify voltage is used when writing is carried out to the nonvolatile memory cell after the thermal process.
Dependencies are inferred from the claim text.