NAND type flash memory

A NAND type flash memory comprising:

• a first memory plane with first and second NAND blocks;
• a second memory plane with third and fourth NAND blocks, and disposed in parallel with the first memory plane;
• a third memory plane with fifth and sixth NAND blocks, and disposed in parallel with the second memory plane;
• a fourth memory plane with seventh and eighth NAND blocks, and disposed in parallel with the third memory plane;
• a first transfer transistor with a control terminal, a first potential transfer terminal, and a second potential transfer terminal, and disposed between the first and second memory planes, the first potential transfer terminal being commonly connected to a first word line in the first NAND block and a second word line in the third NAND block;
• a second transfer transistor with a control terminal, a first potential transfer terminal, and a second potential transfer terminal, and disposed between the second and third memory planes, the first potential transfer terminal being commonly connected to a third word line in the fourth NAND block and a fourth word line in the sixth NAND block;
• a third transfer transistor with a control terminal, a first potential transfer terminal, and a second potential transfer terminal, and disposed between the third and fourth memory planes, the first potential transfer terminal being commonly connected to a fifth word line in the fifth NAND block and a sixth word line in the seventh NAND block;
• a fourth transfer transistor with a control terminal, a first potential transfer terminal, and a second potential transfer terminal, and disposed at a first end on a side of the first memory plane that is opposite the second memory plane, the first potential transfer terminal being connected to a seventh word line in the second NAND block;
• and
• a fifth transfer transistor with a control terminal, a first potential transfer terminal, and a second potential transfer terminal, and disposed at a second end on a side of the fourth memory plane that is opposite the third memory plane, the first potential transfer terminal being connected to an eighth word line in the eighth NAND block.

A NAND type flash memory comprising:

• a memory plane with first and second NAND blocks, the first NAND block with a first word line extending to a first direction, the second NAND block with a second word line extending to the first direction, and the first and second blocks being arrayed in a second direction intersecting the first direction;
• a first transfer transistor with a control terminal, a first potential transfer terminal, and a second potential transfer terminal, disposed at a first end on a side of the memory plane in the first direction, and the first potential transfer terminal being connected to the first word line;
• a second transfer transistor with a control terminal, a first potential transfer terminal, and a second potential transfer terminal, disposed at a second end on a side of the memory plane in the first direction, and the first potential transfer terminal being connected to the second word line;
• a first decode block that is disposed at the first end to generate a control signal to be applied to the control terminal of the first transfer transistor;
• and
• a second decode block that is disposed at the first end to generate a control signal to be applied to the control terminal of the second transfer transistor.