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US 8,274,813 B2Granted
Memristive negative differential resistance device
AssigneeHewlett-Packard Development Company, L.P.
InventorsMatthew D. Pickett, Julien Borghetti, Gilberto Medeiros Ribeiro
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Abstract
A memristive Negative Differential Resistance (NDR) device includes a first electrode adjacent to a memristive matrix, the memristive matrix including an intrinsic semiconducting region and a highly doped secondary region, a Metal-Insulator-Transition (MIT) material in series with the memristive matrix, and a second electrode adjacent to the MIT material.
Claims16
A circuit comprising a memristive Negative Differential Resistance (NDR) device comprising:
- a first electrode adjacent to a memristive matrix, said memristive matrix comprising an intrinsic semiconducting region and a highly doped secondary region;
- a Metal-Insulator-Transition (MIT) material in series with said memristive matrix;
- and
- a second electrode adjacent to said MIT material.
1 more element
Dependencies are inferred from the claim text.