Electrostatic discharge protection of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorChang-Ho Do
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a pads for receiving a reference voltage and input signals from an external device, a unit gain buffer for receiving the reference voltage as an input, input buffers for identifying a corresponding one of the input signals based on an internal reference voltage outputted from the unit gain buffer, external electrostatic discharge protectors connected to a transmission path of the reference voltage and transmission paths of input signals, and internal electrostatic discharge protectors connected to the transmission path of the reference voltage and the transmission paths of the input signals.
Claims14
A semiconductor device, comprising:
- a plurality of pads for receiving a reference voltage and a plurality of input signals from an external device;
- a unit gain buffer for receiving the reference voltage as an input;
- a plurality of input buffers, each identifying a corresponding one of the plurality of input signals based on an internal reference voltage outputted from the unit gain buffer;
- a plurality of external electrostatic discharge protectors connected to a transmission path of the reference voltage and transmission paths of the plurality of input signals;
- and
- a plurality of internal electrostatic discharge protectors connected to the transmission path of the reference voltage and the transmission paths of the plurality of input signals.
A semiconductor device, comprising:
- a plurality of pads for receiving a reference voltage and a plurality of input signals from an external device;
- an internal reference voltage generator for generating an internal reference voltage by shifting an electric potential level of the reference voltage;
- a plurality of input buffers, each for identifying a corresponding one of the plurality of input signals based on the internal reference voltage;
- a plurality of external electrostatic discharge protectors connected to a transmission path of the reference voltage and transmission paths of the plurality of input signals;
- and
- a plurality of internal electrostatic discharge protectors connected to a transmission path of the reference voltage and transmission paths of the plurality of input signals.
Dependencies are inferred from the claim text.