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US 8,274,163 B2Granted
Method and apparatus providing integrated circuit having redistribution layer with recessed connectors
AssigneeMicron Technology, Inc.
InventorDavid Pratt
Life of this patent
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Abstract
A method of making a semiconductor die includes forming a trench around a conductive stud extending from the first side to a second side of a substrate to expose a portion of the stud and then forming a conductive layer inside the trench and in electrical contact with the stud.
Claims10
A semiconductor die, comprising:
- a substrate having a first side and a second side;
- an integrated circuit formed on the second side of the substrate;
- a stud arranged through the substrate and electrically coupling the integrated circuit to the first side of the substrate;
- a trench arranged in the substrate around the stud and extending away from the stud;
- a first dielectric layer arranged in the trench;
- and
- a conductive layer arranged and wholly contained within the trench on the first dielectric layer, electrically coupling a first bond pad at the stud to a second bond pad remotely located from the stud, the first and second bond pads also being wholly contained within the trench.
4 more elements
Dependencies are inferred from the claim text.