Back to results
US 8,274,134 B2Granted
Semiconductor device with electric fuse having interconnects and via
AssigneeRenesas Electronics Corporation
InventorsYoshitaka Kubota, Hiromichi Takaoka, Hiroshi Tsuda
Life of this patent
Estimating the term…
Abstract
A semiconductor device (200) includes an electric fuse (100) including: an upper layer fuse interconnect (112) formed on a substrate (not shown); a lower layer fuse interconnect (122); and a via (130) which is connected to one end of the upper layer fuse interconnect (112) and connects the upper layer fuse interconnect (112) and the lower layer fuse interconnect (122). The upper fuse interconnect (112) includes a width varying region (118) having a small interconnect width on a side of the one end.
Claims16
A semiconductor device, comprising:
- a substrate;
- and
- an electric fuse including:
- a first fuse interconnect formed over the substrate;
- a second fuse interconnect formed in a layer different from a layer in which the first fuse interconnect over the substrate is formed;
- and
- a via which is connected to one end of the first fuse interconnect and connects the first fuse interconnect and the second fuse interconnect,
- wherein the first fuse interconnect includes a gradual width varying region including a small interconnect width region on a side of the one end of the first fuse interconnect and a large interconnect width region on a side of an other end of the first fuse interconnect,
- wherein the layer in which the first fuse interconnect is formed is located above the layer in which the second fuse interconnect is formed,
- wherein the first fuse interconnect, the second fuse interconnect, and the via each comprise:
- a copper-containing metal film;
- and
- a barrier metal film which covers a side surface and a bottom surface of the copper-containing metal film,
- wherein before disconnection, the barrier metal film is formed between the second fuse interconnect and the via so as to be in contact with the copper-containing metal film which forms each of the second fuse interconnect and the via, and
- wherein, when a current flows through the first fuse interconnect, the current flows from the small interconnect width region to the large interconnect width region.
12 more elements
A semiconductor device, comprising:
- a substrate;
- a first fuse interconnect formed over the substrate;
- a second fuse interconnect formed in a layer different from a layer in which the first fuse interconnect over the substrate is formed;
- and
- a via which is connected to an one end of the first fuse interconnect,
- wherein a width of the first fuse interconnect decreases gradually as the first fuse interconnect approaches the via,
- wherein the via connects the first fuse interconnect and the second fuse interconnect,
- wherein the layer in which the first fuse interconnect is formed is located above the layer in which the second fuse interconnect is formed,
- wherein the first fuse interconnect, the second fuse interconnect, and the via each comprise:
- a metal film which includes copper;
- and
- a barrier metal film which covers a side surface and a bottom surface of the metal film,
- wherein before disconnection, the barrier metal film is formed between the second fuse interconnect and the via so as to be in contact with the metal film which forms the second fuse interconnect and the via, and
- wherein, when a current flows through the first fuse interconnect, the current flows from a narrow region of the first fuse interconnect toward a wide region of the first fuse interconnect.
11 more elements
Dependencies are inferred from the claim text.