Multifunctional heater/chiller pedestal for wide range wafer temperature control

A pedestal for a semiconductor processing chamber, comprising:

• a substrate support comprising a conductive material and having a support surface for receiving a substrate;
• a hollow shaft coupled with the substrate support comprising:
• a shaft body having a hollow core;
• and
• an active cooling system providing for active control of the temperature of a substrate positioned on the support surface comprising;
• a heating element encapsulated within the substrate support;
• and
• a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein a heat control gap is positioned between the heating element and a ring-shaped cooling channel.

A plasma processing system, comprising:

• a processing chamber body having:
• sidewalls;
• a bottom wall;
• and
• an interior sidewall defining a pair of processing regions;
• and
• a pedestal disposed in at least one of the pair of processing regions;
• comprising:
• a substrate support comprising a conductive material and having a support surface for receiving a substrate;
• a hollow shaft coupled with the substrate support comprising:
• a shaft body having a hollow core;
• and
• an active cooling system providing for active control of the temperature of a substrate positioned on the support surface comprising;
• a heating element encapsulated within the substrate support;
• and
• a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein a heat control gap is positioned between the heating element and a ring-shaped cooling channel;
• and
• a radio frequency source is coupled with the processing chamber body.