Semiconductor device and method for manufacturing thereof
AssigneeSpansion LLC
InventorYukihiro Utsuno
Life of this patent
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Abstract
A semiconductor device which includes two trenches formed in a semiconductor substrate, a charge storage layer as an insulator formed on each side surface of the trenches, and separated on a bottom surface thereof, and a bit line formed below the bottom surface of the trenches in the semiconductor substrate. A channel region is formed in the semiconductor substrate from a side surface of one of the two trenches to that of the other trench via an upper surface of a protruding portion between those two trenches. A method for manufacturing the semiconductor device is also provided.
Claims12
A semiconductor device comprising:
- two trenches formed in a semiconductor substrate, wherein each side surface of the two trenches is sloped;
- a charge storage layer as an insulator formed on each of the sloped side surfaces of the two trenches, wherein each sloped side surface of the two trenches has a separate charge storage layer, wherein the charge storage layers are separated from each other by the bottom surfaces of the two trenches, and wherein each charge storage layer extends substantially an entire length of a corresponding sloped side surface;
- and
- a bit line formed only below the bottom surface of each one of the two trenches inside the semiconductor substrate, wherein the bit lines are separated from respective side surface edges of each of the two trenches, wherein a channel region is formed in the semiconductor substrate from one side surface of one of the two trenches to that of the other trench via an upper surface of a protruding portion formed between the two trenches.
A method for manufacturing a semiconductor device comprising:
- forming two trenches in a semiconductor substrate, wherein each side surface of the two trenches is sloped;
- forming a charge storage layer as an insulator on each of the sloped side surfaces of the two trenches, wherein each sloped side surface of the two trenches has a separate charge storage layer, wherein the charge storage layers are separated from each other by the bottom surfaces of the two trenches, and wherein each charge storage layer extends substantially an entire length of a corresponding sloped side surface;
- and
- forming a bit line only below each bottom surface of the two trenches inside the semiconductor substrate, wherein the bit lines are separated from respective side surface edges of each of the two trenches, wherein a channel region is formed in the semiconductor substrate from one side surface of one of the two trenches to that of the other trench via an upper surface of a protruding portion formed between the two trenches.
Dependencies are inferred from the claim text.