Semiconductor with a dynamic gate-drain capacitance

A method for manufacturing a semiconductor device, comprising:

• providing a semiconductor substrate comprising a drift region of a first conductivity type;
• forming an insulation structure on the semiconductor substrate;
• forming at least an electrode structure arranged on the insulation structure such that the electrode structure comprises at least an electrode portion comprising a lateral width d2;
• implanting a dopant of a second conductivity type into the drift region using the electrode portion as implantation mask such that a first doping region and a second doping region of the second conductivity type are formed, wherein the first and second doping regions are laterally spaced from each other;
• performing at least one thermal anneal for diffusing the implanted dopant to form a first and second body region;
• and
• wherein the lateral width d2 and the thermal anneal are selected such that the doping regions diffuses together and form a depletable region of the second conductivity type which connects the first and second body regions.