Methods for manufacturing array substrates
AssigneeChimei Innolux Corporation
InventorCheng-Hsu Chou
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Abstract
Disclosed is a patterned photoresist layer on a passivation layer, formed by a lithography process with a multi-tone photomask, having a non-photoresist region, a thin photoresist pattern, and a thick photoresist pattern. The passivation layer corresponding to the non-photoresist region is removed, thereby forming vias to expose a part of a drain electrode in a TFT and a part of a top electrode in a storage capacitor, respectively. The thin photoresist pattern is then ashed to expose the passivation layer in a pixel region. Thereafter, a conductive layer is selectively deposited on the exposed passivation layer and on the sidewalls/bottoms of the vias. Subsequently, the remaining thick photoresist pattern is ashed.
Claims10
A method for manufacturing an array substrate, comprising:
- forming a thin film transistor, a pixel region, and a storage capacitor on a substrate, respectively;
- forming a passivation layer on the thin film transistor, the pixel region, and the storage capacitor;
- forming a first photoresist layer on the passivation layer;
- performing a lithography process by a first multi-tone photomask to pattern the first photoresist layer, thereby forming a first non-photoresist region, a first thin photoresist pattern, and a first thick photoresist pattern, wherein the first non-photoresist region substantially corresponds to a part of a drain electrode of the thin film transistor and a part of the storage capacitor, the first thin photoresist pattern substantially corresponds to the pixel region, and the first thick photoresist pattern substantially corresponds to the thin film transistor except for the part of the drain electrode;
- removing the passivation layer of the first non-photoresist region to expose the part of the drain electrode of the thin film transistor and the part of the storage capacitor;
- ashing the first thin photoresist pattern to expose the passivation layer of the pixel region;
- selectively depositing a conductive layer on the exposed part of the drain electrode of the thin film transistor, the exposed part of the storage capacitor, and the exposed part of the passivation layer;
- and
- removing the first thick photoresist pattern.
Dependencies are inferred from the claim text.