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US 8,273,419 B2Granted
Method of forming gas barrier layers including a change in pressure, a gas barrier layer formed by the method, and a gas barrier film
AssigneeFUJIFILM Corporation
InventorToshiya Takahashi
Life of this patent
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Abstract
A method of forming a gas barrier layer comprises: forming a first layer over a substrate by plasma-enhanced CVD at a first pressure, at least a part of a surface of the substrate being made of an organic material; and forming a second layer on the first layer by plasma-enhanced CVD at a second pressure which is lower than the first pressure.
Claims7
A method of forming a gas barrier layer comprising:
- forming a first layer over a substrate by plasma-enhanced CVD at a first pressure, at least a part of a surface of the substrate being made of an organic material;
- and
- forming a second layer on the first layer by plasma-enhanced CVD at a second pressure which is lower than the first pressure.
Dependencies are inferred from the claim text.