US 8,264,081 B2 · Multilayered barrier metal thin-films

Abstract

A multi-layered barrier metal thin film is deposited on a substrate by atomic layer chemical vapor deposition (ALCVD). The multi-layer film may comprise several different layers of a single chemical species, or several layers each of distinct or alternating chemical species. In a preferred embodiment, the multi-layer barrier thin film comprises a Tantalum Nitride layer on a substrate, with a Titanium Nitride layer deposited thereon. The thickness of the entire multi-layer film may be approximately fifty Angstroms. The film has superior film characteristics, such as anti-diffusion capability, low resistivity, high density, and step coverage, when compared to films deposited by conventional chemical vapor deposition (CVD). The multi-layered barrier metal thin film of the present invention has improved adhesion characteristics and is particularly suited for metallization of a Copper film thereon.

Claims9

Dependent claims

An integrated circuit including a multi-layered barrier thin film structure, comprising:

a substrate;
a mono-layer first barrier thin film overlying the substrate, where a mono-layer is defined as a single atomic layer of first barrier thin film material;
a mono-layer second barrier thin film overlying the first barrier thin film, where a mono-layer is defined as a single atomic layer of second barrier thin film material;
a thin copper film deposited on, and in direct contact with said second barrier thin film;
and,
wherein said first barrier thin film and said second barrier thin film are different materials, each chosen from the group of materials consisting of TiN, TaN, W, WN, and Si3N4.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

11/311,546Filed 19 Dec 2005 · division

Priority

27 Mar 2001

Published

US 2006/0091554 A14 May 2006

Granted

11 Sep 2012

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10P 14/432
Chemical deposition, e.g. chemical vapour deposition [CVD]: using selective deposition
H10W 20/032
Of conductive parts of the interconnections: of conductive barrier, adhesion or liner layers
H10W 20/0375
Of conductive barrier, adhesion or liner layers: comprising multiple stacked thin barrier, adhesion or liner layers not being formed in openings…
H10P
Generic processes or apparatus for the manufacture or treatment of devices covered

Multilayered barrier metal thin-films

Life of this patent

Multilayered barrier metal thin-films

Life of this patent

Abstract

Claims9