Semiconductor device

A method of manufacturing a semiconductor device by exposing a mask layer over a semiconductor substrate by using a first mask and a second mask, the mask layer for forming a via pattern in a groove shape of a moisture-resistant ring, the first mask including a first extending portion pattern linearly extending in a first direction and a vertical portion pattern orthogonal to the first direction, and the second mask including a second extending portion pattern linearly extending in the first direction, the method comprising:

• exposing a first via pattern on the mask layer by using one of the first or second masks so that a part of the groove shape of the moisture-resistant ring is formed on the mask layer;
• and
• exposing a second via pattern on the mask layer by using the other one of the first or second masks so that all of the groove shape of the moisture-resistant ring is formed on the mask layer;
• wherein the exposing the first and second via pattern on the mask layer is performed by forming a first portion exposed by the vertical portion pattern and a second portion exposed by the second extending portion pattern orthogonal, and forming a third portion exposed by the first extending portion pattern and the second portion of the second extending portion pattern spaced apart, the third portion connecting to the first portion;
• and
• the moisture-resistant ring includes:
• a first extending portion linearly extending in an insulating layer formed over the semiconductor substrate and in a first direction in parallel to the surface of the semiconductor substrate;
• a vertical portion connected to the first extending portion extending in the insulating layer and in a second direction orthogonal to the first extending portion and in parallel to the surface of the semiconductor substrate;
• and
• a second extending portion linearly extending in the insulating layer and orthogonal to the vertical portion and in parallel to the surface of the semiconductor substrate, the second extending portion spaced apart from the first extending portion, the second extending portion crossing the vertical portion.

A method of manufacturing a semiconductor device by exposing a mask layer over a semiconductor substrate by using a mask, the mask layer for forming a via pattern in a groove shape of a moisture-resistant ring, the mask including a first extending portion pattern linearly extending in a first direction, a vertical portion pattern orthogonal to the first direction, the first extending portion pattern and the vertical portion pattern formed on one side of the mask, and a second extending portion pattern extending parallel to the first direction, the second extending portion pattern formed on the other side of the mask, the method comprising:

• exposing a first extending portion pattern, a vertical portion pattern and a second extending portion pattern on a first area of the mask layer;
• arranging the mask over the mask layer from the first area to a second area, the second area adjacent to the first area;
• exposing a first extending portion pattern, a vertical portion pattern and a second extending portion pattern on the second area of the mask layer such that the vertical portion pattern exposed on the first area is orthogonal to the second extending portion pattern exposed on the second area, and the vertical portion pattern is connected to the first extending portion pattern;
• and
• the moisture-resistant ring includes:
• a first extending portion linearly extending in an insulating layer formed over the semiconductor substrate and in a first direction in parallel to the surface of the semiconductor substrate;
• a vertical portion connected to the first extending portion extending in the insulating layer and in a second direction orthogonal to the first extending portion and in parallel to the surface of the semiconductor substrate;
• and
• a second extending portion linearly extending in the insulating layer and orthogonal to the vertical portion and in parallel to the surface of the semiconductor substrate, the second extending portion spaced apart from the first extending portion, the second extending portion crossing the vertical portion.