Schottky diode
AssigneeMacronix International Co., Ltd.
InventorsChung Yu Hung, Chih Min Hu, Wing Chor Chan, Jeng Gong
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Abstract
A Schottky diode comprises an ohmic layer that can serve as a cathode and a metal layer that can serve as an anode, and a drift channel formed of semiconductor material that extends between the ohmic and metal layers. The drift channel includes a heavily doped region adjacent to the ohmic contact layer. The drift channel forms a Schottky barrier with the metal layer. A pinch-off mechanism is provided for pinching off the drift channel while the Schottky diode is reverse-biased. As a result, the level of saturation or leakage current between the metal layer and the ohmic contact layer under a reverse bias condition of the Schottky diode is reduced.
Claims25
A Schottky diode comprising:
- an ohmic contact layer;
- a metal layer;
- a drift channel that extends between the ohmic contact layer and the metal layer;
- and
- a pinch-off mechanism for pinching off the drift channel while the Schottky diode is reverse-biased.
A Schottky diode comprising:
- a Schottky barrier;
- a drift channel extending from the Schottky barrier;
- a semiconductor substrate including a first substrate portion, a second substrate portion, and a third substrate portion;
- and
- a control gate that extends between the second and third substrate portions;
- wherein the second and third substrate portions are configured to selectively exert a pinch-off condition to the drift channel depending at least upon a polarity of voltage applied to the control gate.
Dependencies are inferred from the claim text.