Symmetric STT-MRAM bit cell design
AssigneeQUALCOMM Incorporated
InventorWilliam Xia
Life of this patent
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Abstract
A symmetric Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) bit cell and STT-MRAM bit cell array are disclosed. The STT-MRAM bit cell includes a poly silicon layer, a magnetic tunnel junction (MTJ) storage element, and a bottom electrode (BE) plate. The storage element and bottom electrode (BE) plate are symmetric along a center line of the poly silicon layer.
Claims25
A symmetric Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) bit cell comprising:
- a poly silicon layer;
- a storage element;
- and
- a bottom electrode (BE) plate,
- wherein the storage element and bottom electrode (BE) plate are symmetric along a center line of the poly silicon layer.
A symmetric Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) bit cell array comprising:
- a source line;
- and
- a plurality of STT-MRAM bit cells arranged on a longitudinal axis that is perpendicular to a longitudinal axis of the source line and on opposite sides of the source line,
- wherein the plurality of STT-MRAM bit cells are symmetrically arranged with respect to the source line, and wherein each of the STT-MRAM bit cells includes:
- a poly silicon layer;
- a magnetic tunnel junction (MTJ) storage element;
- and
- a bottom electrode (BE) plate,
- wherein the storage element and bottom electrode (BE) plate are symmetric along a center line of the poly silicon layer.
A method of forming a symmetric Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) bit cell array, the method comprising:
- forming a plurality of STT-MRAM bit cells arranged on a longitudinal axis that is perpendicular to a longitudinal axis of a source line and on opposite sides of the source line such that the plurality of STT-MRAM bit cells are symmetrically arranged with respect to the source line, wherein each of the STT-MRAM bit cells includes:
- a poly silicon layer;
- a magnetic tunnel junction (MTJ) storage element;
- and
- a bottom electrode (BE) plate,
- wherein the storage element and bottom electrode (BE) plate are symmetric along a center line of the poly silicon layer.
Dependencies are inferred from the claim text.