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US 8,264,021 B2Granted
Finfets and methods for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLi-Shyue Lai, Tsz-Mei Kwok, Chih Chieh Yeh, Clement Hsingjen Wann
Life of this patent
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Abstract
A Fin field effect transistor (FinFET) includes a fin-channel body over a substrate. A gate electrode is disposed over the fin-channel body. At least one source/drain (S/D) region is disposed adjacent to the fin-channel body. The at least one S/D region is substantially free from including any fin structure.
Claims15
A Fin field effect transistor (FinFET) comprising:
- a fin-channel body over a substrate;
- a gate electrode disposed over the fin-channel body;
- and
- at least one source/drain (S/D) region disposed adjacent to the fin-channel body, the at least one S/D region being substantially free from including any fin structure, wherein
- the substrate has a portion between a first isolation region and a second isolation region, the at least one S/D region includes an epitaxially-grown region, and the epitaxially-grown region is disposed over the portion of the substrate, and
- the first isolation region has a corner where a surface of the first isolation region and an interface between the first isolation region and the portion of the substrate intersect, the portion of the substrate has a tip where a surface of the portion of the substrate and the interface between the first isolation region and the portion of the substrate intersect, and the corner is substantially adjacent to the tip.
3 more elements
A Fin field effect transistor (FinFET) comprising:
- a fin-channel body over a substrate, the substrate having a portion between a first isolation region and a second isolation region;
- a gate electrode disposed over the fin-channel body;
- and
- at least one source/drain (S/D) region disposed adjacent to the fin-channel body, the at least one S/D region comprising:
- an epitaxially-grown region disposed over the portion of the substrate, wherein the epitaxially-grown region and the portion of the substrate has an interface and a central region of the interface is below a surface of the first isolation region;
- and
- a silicide structure disposed over the epitaxially-grown region,
- wherein the first isolation region has a corner where the surface of the first isolation region and a sidewall of the first isolation region intersect, the portion of the substrate has a tip where a surface of the portion of the substrate and a sidewall of the portion of the substrate intersect, and the corner is substantially adjacent to the tip.
5 more elements
A method for forming a Fin field effect transistor (FinFET), the method comprising:
- forming a fin over a substrate, and removing at least one end portion of the fin to expose a surface of a portion of the substrate surrounded by first and second isolation regions to form a fin-channel body over the substrate, wherein the first isolation region has a corner where a surface of the first isolation region and a sidewall of the first isolation region intersect, the portion of the substrate has a tip where a surface of the portion of the substrate and a sidewall of the portion of the substrate intersect, and the corner is substantially adjacent to the tip;
- forming a gate electrode over the fin-channel body;
- and
- epitaxially growing at least one S/D region from the exposed surface of the portion of the substrate to form the at least one source/drain (S/D) region adjacent to the fin-channel body, the at least one S/D region being substantially free from including any fin structure.
1 more element
Dependencies are inferred from the claim text.