Semiconductor device with a protection diode
AssigneeKabushiki Kaisha Toshiba
InventorTetsuro Nozu
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Abstract
According to one embodiment, a semiconductor device includes a semiconductor substrate, a semiconductor region, a first and second electrodes. The semiconductor region is provided on the semiconductor substrate via an insulating film. The semiconductor region includes a protection diode. An overvoltage causes breakdown of the protection diode. A PN junction of the protection diode is exposed at an end face of the semiconductor region. A first and second electrodes are provided distally to the exposed end face of the PN junction. The first and second electrodes are connected to the semiconductor region to provide a current to the protection diode.
Claims13
A semiconductor device, comprising:
- a semiconductor region provided on a semiconductor substrate via an insulating film, the semiconductor region including a protection diode;
- and
- first and second electrodes connected to the semiconductor region to provide a current to the protection diode,
- a PN junction of the protection diode being exposed at an end face of the semiconductor region,
- the first and second electrodes being provided distally to the exposed end face of the PN junction, and
- a distance from each of the first and second electrodes to the end face of the exposed PN junction being not less than a spacing between the first and second electrodes.
Dependencies are inferred from the claim text.