Methods of forming a plurality of capacitors

A method of forming a plurality of capacitors, comprising:

• providing a substrate comprising a capacitor array area and another circuitry area other than the capacitor array area, an insulative material received over the capacitor array area and the other circuitry area, the capacitor array area comprising a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations, the other circuitry area comprising a sidewall of the insulative material;
• forming conductive metal nitride-comprising material within the capacitor electrode openings within the capacitor array area and against at least a portion of said sidewall of insulative material;
• annealing the conductive metal nitride-comprising material received against said portion of said sidewall of insulative material in a nitrogen-comprising atmosphere, the nitrogen-comprising atmosphere comprising liquid;
• after the annealing, etching the insulative material within the capacitor array area to expose outer sidewall portions of the conductive metal nitride-comprising material within the capacitor array area;
• and
• after the etching, incorporating the conductive metal nitride-comprising material within the capacitor array into a plurality of capacitors that comprise the conductive metal nitride-comprising material within the capacitor array.

A method of forming a plurality of capacitors, comprising:

• providing a substrate comprising a capacitor array area and another circuitry area other than the capacitor array area, an insulative material received over the capacitor array area and the other circuitry area, the capacitor array area comprising a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations, the other circuitry area comprising a sidewall of the insulative material;
• forming conductive metal nitride-comprising material within the capacitor electrode openings within the capacitor array area and against at least a portion of said sidewall of insulative material;
• annealing the conductive metal nitride-comprising material received against said portion of said sidewall of insulative material in a nitrogen-comprising atmosphere;
• after the annealing, etching the insulative material within the capacitor array area to expose outer sidewall portions of the conductive metal nitride-comprising material within the capacitor array area;
• and
• after the etching, incorporating the conductive metal nitride-comprising material within the capacitor array into a plurality of capacitors that comprise the conductive metal nitride-comprising material within the capacitor array.