Method for forming semiconductor devices with active silicon height variation
AssigneeAdvanced Micro Devices, Inc.
InventorsDavid E. Brown, Hans Van Meer, Sey-Ping Sun
Life of this patent
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Abstract
A method far farming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.
Claims15
A method of manufacturing a semiconductor product comprising:
- forming a layer of silicon with different active thicknesses of silicon on a single semiconductor substrate, including:
- providing a mask layer on a layer of silicon, the silicon of the layer of silicon having a first thickness;
- creating an opening in the mask layer to expose a region of the layer of silicon;
- and
- increasing the thickness of the silicon of the layer of silicon at the exposed region to a second thickness greater than the first thickness.
A method of forming a silicon layer with different active thicknesses on a single semiconductor substrate comprising:
- providing a mask layer on a layer of silicon, the silicon of the layer of silicon having a first thickness;
- creating an opening in the mask layer to expose a region of the silicon of the layer of silicon;
- and
- increasing the thickness of the silicon of the layer of silicon at the exposed region to a second thickness greater than the first thickness.
Dependencies are inferred from the claim text.