Semiconductor device and method for manufacturing the same
AssigneeFujitsu Semiconductor Limited
InventorKo Nakamura
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Abstract
According to the present invention, there is provided a method for manufacturing a semiconductor device, including the steps of forming an insulating film on a silicon substrate, forming a first conductive film on the insulating film, forming an aluminum crystal layer on the first conductive film, forming a ferroelectric film containing Pb(ZrxTi1-x)O3 (where 0≦x≦1) on the aluminum crystal layer, forming a second conductive film on the ferroelectric film, and patterning the first conductive film, the ferroelectric film, and the second conductive film to form a capacitor including a lower electrode, a capacitor dielectric film, and an upper electrode which are laminated sequentially.
Claims12
A method for manufacturing a semiconductor device, comprising:
- forming an insulating film over a semiconductor substrate;
- forming a first conductive film over the insulating film;
- forming an aluminum crystal layer on the first conductive film;
- forming a ferroelectric film containing Pb(ZrxTi1-x)O3 (where 0≦x≦1) on the aluminum crystal layer;
- forming a second conductive film on the ferroelectric film;
- and
- patterning the first conductive film, the ferroelectric film, and the second conductive film to form a capacitor including a lower electrode, a capacitor dielectric film, an upper electrode which are sequentially stacked, wherein
- the aluminum crystal layer is formed in a dotted pattern.
A method for manufacturing a semiconductor device, comprising:
- forming an insulating film over a semiconductor substrate;
- forming a first conductive film over the insulating film;
- patterning the first conductive film to form a lower electrode;
- forming an aluminum crystal layer on a side surface and an upper surface of the lower electrode;
- forming a ferroelectric film containing Pb(ZrxTi1-x)O3 (where 0≦x≦1) on the aluminum crystal layer and the insulating film;
- forming a second conductive film on the ferroelectric film;
- patterning the ferroelectric film to leave the ferroelectric film as a capacitor dielectric film on the side surface and the upper surface of the lower electrode;
- and
- patterning the second conductive film to leave the second conductive film, as an upper electrode, over and beside a side of the lower electrode, and forming a capacitor with the upper electrode, the capacitor dielectric film, and the lower electrode.
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating film formed over the semiconductor substrate;
- and
- a capacitor, which is formed on the insulating film, and which is formed by sequentially stacking a lower electrode, a capacitor dielectric film containing Pb(ZrxTi1-x)O3 (where 0≦x≦1) and aluminum, and an upper electrode.
Dependencies are inferred from the claim text.