Method, program and system for processing substrate
AssigneeTokyo Electron Limited
InventorHidetami Yaegashi
Life of this patent
Estimating the term…
Abstract
The invention relates to a method for processing a substrate on which a target film is formed. The method includes forming a first film on the target layer; forming a second film on the first film, the second film being photosensitive; patterning the second film with a photolithography process; removing a portion of the first film selectively using the second film as a mask; removing a portion of the target film selectively using the second film as a mask; reducing the width of first film to an intended width by removing sidewall portions thereof; forming a third film at least on the first film and on the top of the target film; removing the first film and the second film; and removing a portion of the target film using the third film as a mask.
Claims15
A method for processing a substrate on which a target film is formed, comprising:
- forming a first film on the target film;
- forming a second film on the first film, the second film being photosensitive;
- patterning the second film with a photolithography process;
- removing a portion of the first film selectively using the second film as a mask;
- removing a first portion of the target film selectively using the second film as a mask;
- reducing the width of first film to an intended width by removing sidewall portion thereof;
- forming a third film at least on the first film and on the top of the target film;
- removing the first film and the second film;
- and
- removing a second portion of the target film using the third film as a mask.
Dependencies are inferred from the claim text.