Antireflective coating material
AssigneeDow Corning Corporation
InventorsPeng-Fei Fu, Eric Scott Moyer
Life of this patent
Estimating the term…
Abstract
Antireflective coatings comprising (i) a silsesquioxane resin having the formula (PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2; m has a value of 0.01 to 0.99, n has a value of 0.01 to 0.99, p has a value of 0.01 to 0.99, and m+n+p=1; (ii) a polyethylene oxide fluid; and (iii) a solvent; and a method of forming said antireflective coatings on an electronic device.
Claims25
A method of forming an antireflective coating (ARC) on an electronic device comprising
- (A) applying to an electronic device an ARC composition comprising
- (i) a silsesquioxane resin having the formula
- (PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p
- where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2;
- m has a value of 0.01 to 0.99, n has a value of 0.01 to 0.99, p has a value of 0.01 to 0.99, and m+n+p≈1;
- (ii) a polyethylene oxide fluid having the general formula R1(CH2CH2O)zR2, wherein R1 is allyl and R2 is selected from H, a hydrocarbon group having 1 to 3 carbon atoms, an unsaturated hydrocarbon group, and an acetyl group (CH3CO—), and z is such that the polyethylene oxide fluid typically has a molecular weight of 50 to 5000 g/mol;
- and
- (iii) a solvent;
- and
- (B) removing the solvent and curing the silsesquioxane resin to form an ARC on the electronic device.
A method of forming an antireflective coating (ARC) on an electronic device comprising
- (A) applying to an electronic device an ARC composition comprising
- (i) a silsesquioxane resin having the formula
- (PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p
- where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2;
- m has a value of 0.01 to 0.99, n has a value of 0.01 to 0.99, p has a value of 0.01 to 0.99, and m+n+p≈1;
- (ii) a polyethylene oxide fluid having the general formula R1(CH2CH2O)zR2, wherein R1 is allyl and R2 is selected from H, a hydrocarbon group having 1 to 3 carbon atoms, an unsaturated hydrocarbon group, and an acetyl group (CH3CO—), and z is such that the polyethylene oxide fluid typically has a molecular weight of 50 to 5000 g/mol;
- and
- (iii) a solvent;
- and
- (B) removing the solvent and curing the silsesquioxane resin to form an ARC on the electronic device;
- and
- (C) forming a resist image over the ARC.
A method of forming an antireflective coating (ARC) on an electronic device comprising:
- (A) applying to an electronic device an ARC composition comprising:
- (i) a silsesquioxane resin having the formula
- (PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p
- where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2;
- m has a value of 0.01 to 0.99, n has a value of 0.01 to 0.99, p has a value of 0.01 to 0.99, and m+n+p≈1;
- (ii) a polyethylene oxide fluid having the general formula R1(CH2CH2O)zR2, wherein R1 is allyl and R2 is selected from H, a hydrocarbon group having 1 to 3 carbon atoms, an unsaturated hydrocarbon group, and an acetyl group (CH3CO—), and z is such that the polyethylene oxide fluid typically has a molecular weight of 50 to 5000 g/mol;
- and
- (iii) a solvent;
- and
- (B) removing the solvent and curing the silsesquioxane resin to form an ARC on the electronic device;
- (C) forming a resist image over the ARC;
- and
- (D) etching a pattern in the anti-reflective film.
A method of forming an antireflective coating (ARC) on an electronic device comprising
- (A) applying to an electronic device an ARC composition comprising
- (i) a silsesquioxane resin having the formula
- (PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p
- where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2;
- m has a value of 0.01 to 0.99, n has a value of 0.01 to 0.99, p has a value of 0.01 to 0.99, and m+n+p 1;
- (ii) a polyethylene oxide fluid having the general formula R1(CH2CH2O)zR2, wherein R1 is allyl and R2 is selected from H, a hydrocarbon group having 1 to 3 carbon atoms, an unsaturated hydrocarbon group, and an acetyl group (CH3CO—), and z is such that the polyethylene oxide fluid typically has a molecular weight of 50 to 5000 g/mol;
- and
- (iii) a solvent;
- and
- (B) removing the solvent and curing the silsesquioxane resin to form an ARC on the electronic device;
- (C) forming a resist image over the ARC;
- (D) etching a pattern in the anti-reflective film;
- and
- (E) removing the resist image and the anti-reflective film.
An anti-reflective coating (ARC) composition comprising
- (i) a silsesquioxane resin having the formula
- (PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p
- where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2;
- m has a value of 0.01 to 0.99, n has a value of 0.01 to 0.99, p has a value of 0.01 to 0.99, and m+n+p≈1;
- (ii) a polyethylene oxide fluid having the general formula R1(CH2CH2O)zR2, wherein R1 is allyl and R2 is selected from H, a hydrocarbon group having 1 to 3 carbon atoms, an unsaturated hydrocarbon group, and an acetyl group (CH3CO—), and z is such that the polyethylene oxide fluid typically has a molecular weight of 50 to 5000 g/mol;
- and
- (iii) a solvent.
Dependencies are inferred from the claim text.