Plasma processing apparatus, plasma processing method and storage medium
AssigneeTokyo Electron Limited
InventorsHiraku Ishikawa, Yasuhiro Tobe
Life of this patent
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AssigneeTokyo Electron Limited
InventorsHiraku Ishikawa, Yasuhiro Tobe
Estimating the term…
Provided is a plasma processing apparatus including a processing vessel accommodating a target object; a microwave generator configured to generate a microwave; a waveguide configured to induce the microwave to the processing vessel; a planar antenna having a plurality of microwave radiation holes through which the microwave induced to the waveguide is radiated toward the processing vessel; a microwave transmission plate configured to serve as a ceiling wall of the processing vessel and transmit the microwave passed from the microwave radiation holes of the planar antenna; a processing gas inlet unit configured to introduce a processing gas into the processing vessel; and a magnetic field generating unit positioned above the planar antenna and configured to generate a magnetic field within the processing vessel and control a property of plasma of the processing gas by the magnetic field, the plasma being generated by the microwave within the processing vessel.
A plasma processing apparatus comprising:
A plasma processing apparatus comprising:
Dependencies are inferred from the claim text.