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US 8,236,603 B1Granted
Polycrystalline semiconductor layers and methods for forming the same
AssigneesSolexant Corp., Rochester Institute of Technology
InventorsLeslie G. Fritzemeier, Ryne P. Raffaelle, Christopher Leitz
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Abstract
A semiconductor structure may include a polycrystalline substrate comprising a metal, the polycrystalline substrate having substantially randomly oriented grains, as well as a buffer layer disposed thereover. The buffer layer may comprise a plurality of islands having an average island spacing therebetween. A polycrystalline semiconductor layer is disposed over the buffer layer.
Claims18
A method for forming a semiconductor structure, the method comprising:
- providing a polycrystalline substrate comprising a metal and having substantially randomly oriented grains;
- forming, over the polycrystalline substrate, a buffer layer comprising a plurality of spaced-apart islands;
- forming a semiconductor layer over the buffer layer;
- forming a mask over the semiconductor layer;
- and
- inducing relative motion, in a travel direction, between the polycrystalline substrate and a high-temperature region,
- wherein one grain of the semiconductor layer grows from the mask preferentially in the travel direction, thereby forming a single-crystalline portion of the semiconductor layer.
4 more elements
Dependencies are inferred from the claim text.