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US 8,232,127 B2Granted
Thermo-electric semiconductor device and method for manufacturing the same
AssigneesHanvision Co., Ltd., Lumiense Photonics Inc.
InventorRobert Hannebauer
Life of this patent
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Abstract
A thermo-electric semiconductor device is provided. The thermo-electric semiconductor device includes: a first electrode layer; a spacer layer formed on the first electrode layer and having a plurality of pillars with a uniform height, the plurality of pillars thermally grown and protruded on a surface of the spacer layer; and a second electrode layer formed over the spacer layer in such a manner as to contact tops of the protruded pillars.
Claims5
A method for fabricating a thermo-electric semiconductor device, comprising:
- preparing a first electrode layer;
- forming an oxide layer on the first electrode layer;
- forming a mask pattern on the oxide layer;
- thermally growing the oxide layer selectively using the mask pattern to form a plurality of pillars;
- and
- bonding a second electrode layer to each of tops of the plurality of pillars.
3 more elements
A method for fabricating a thermo-electric semiconductor device, comprising:
- preparing a first electrode layer;
- forming a plurality of spacer regions penetrated into the first electrode layer;
- selectively etching a portion of the spacer regions to form a plurality of pillars;
- and
- bonding a second electrode layer to each of tops of the plurality of pillars.
2 more elements
Dependencies are inferred from the claim text.