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US 8,203,144 B2Granted
Semiconductor device having a metal oxide channel
AssigneeHewlett-Packard Development Company, L.P.
InventorsRandy L. Hoffman, Gregory S. Herman, Peter P. Mardilovich
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Abstract
A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.
Claims8
A semiconductor device, comprising:
- a drain electrode;
- a source electrode;
- a channel contacting the drain electrode and the source electrode, wherein the channel includes a metal oxide having one or more compounds of formula AxBxCxDxOx wherein A is In, B is Ga, C is Zn, D is Cd, O is atomic oxygen, and wherein each x is independently a non-zero integer;
- a gate electrode;
- and
- a gate dielectric positioned between the gate electrode and the channel.
3 more elements
A semiconductor device, comprising:
- a drain electrode;
- a source electrode;
- a channel to electrically couple the drain electrode and the source electrode, wherein the channel includes an indium-gallium-zinc metal oxide formed from a precursor composition that includes indium, gallium, and zinc oxides, wherein the formed indium-gallium-zinc metal oxide is in an amorphous form;
- and
- a gate electrode separated from the channel by a gate dielectric.
2 more elements
Dependencies are inferred from the claim text.