In-Ga-Zn-Sn type oxide sinter and target for physical film deposition
AssigneeIdemitsu Kosan Co., Ltd.
InventorsKoki Yano, Kazuyoshi Inoue
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Abstract
An oxide sintered body including an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and including a compound shown by Ga2In6Sn2O16 or (Ga,In)2O3.
Claims18
An oxide sintered body comprising an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and comprising a compound shown by Ga2In6Sn2O16 or (Ga,In)2O3.
An oxide sintered body comprising an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and comprising a compound shown by Ga2In6Sn2O16 and a compound shown by In2O3.
An oxide sintered body comprising an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and comprising a compound shown by Ga2In6Sn2O16 and a compound shown by InGaZnO4.
An oxide sintered body comprising an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and comprising as a main component a compound shown by Ga2.4In5.6Sn2O16.
Dependencies are inferred from the claim text.