Method of designing integrated circuits including providing an option to select a mask layer set

A method of making an integrated circuit (IC), the method comprising:

• providing a standard voltage threshold (SVT) mask layers option, the SVT mask layers option including an SVT voltage threshold n-channel (VTHN) mask layer and an SVT voltage threshold p-channel (VTHP) mask layer;
• and
• providing a high voltage threshold (HVT) mask layers option, the HVT mask layers option including an HVT VTHN mask layer and an HVT VTHP mask layer;
• wherein the HVT mask layers option is an alternative to the SVT mask layers option, and
• wherein core devices of the SVT VTHN and VTHP mask layers are SVT devices and some periphery devices of the SVT VTHN and VTHP mask layers are HVT devices.

A method of making a structured application specific integrated circuit (ASIC), the method comprising:

• providing an option to select between (a) a standard voltage threshold (SVT) mask set including an SVT voltage threshold n-channel (VTHN) mask layer and an SVT voltage threshold p-channel (VTHP) mask layer and (b) a high voltage threshold (HVT) mask set including an HVT VTHN mask layer and an HVT VTHP mask layer;
• and
• receiving a selection from a user choosing either the SVT set or the HVT mask set;
• wherein the HVT mask set is an alternative to the SVT mask set and the SVT mask set;
• the SVT and HVT mask sets map to two physical layers in the structured ASIC;
• core devices of the SVT mask set are SVT devices and some periphery devices of the SVT mask set are HVT devices;
• and hybrid cell (H-cell) devices of the HVT mask set are HVT devices and some periphery devices of the HVT mask set are HVT devices.