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US 8,149,620 B2Granted
Flash memory device having dummy cell
AssigneeSamsung Electronics Co., Ltd.
InventorSang-gu Kang
Life of this patent
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Abstract
A nonvolatile semiconductor memory device includes a string selection transistor coupled to a bit line. The device also includes a plurality of memory cells coupled in series to the string selection transistor, wherein at least one of the memory cells is configured to be in a programmed state during an erase procedure of the plurality of memory cells.
Claims10
A nonvolatile semiconductor memory device, comprising:
- a cell array including a plurality of blocks each of which is formed of a plurality of strings, each string including a plurality of memory cells assigned by an external address and connected to corresponding word lines and at least one memory cell not assigned by the external address and connected to a dummy word line;
- a storage device configured to store position data that selects the at least one memory cell;
- a pre-decoder configured to translate the external address to an internal address in response to the position data;
- a decoder configured to supply word line voltages to the word lines in response to the internal address and a control signal;
- a control unit configured to generate the control signal in response to the position data,
- wherein the control unit controls a driver so that the at least one memory cell connected to the dummy word line is programmed to a predetermined state after an erase operation.
3 more elements
Dependencies are inferred from the claim text.