Magnetic random access memory
AssigneeNEC Corporation
InventorsShunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, Norikazu Ohshima, Kiyokazu Nagahara
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AssigneeNEC Corporation
InventorsShunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, Norikazu Ohshima, Kiyokazu Nagahara
Estimating the term…
An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization free layer, a first magnetization fixed layer, a second magnetization free layer and a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the second magnetization free layer. The first magnetization free layer has: first and second magnetization fixed regions; and a magnetization free region. The magnetization free region and the second magnetization free layer are magnetically coupled to each other. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a second magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the third magnetization free layer.
A magnetic random access memory comprising:
Dependencies are inferred from the claim text.