US 8,149,493 B2Granted

Electro-optic silicon modulator

AssigneeSifotonics Technologies (USA) Inc.

InventorLiang Chen

Life of this patent

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Abstract

In a general aspect, a device includes a substrate, a light transmission formed on a top surface of the substrate, a first contact, and a second contact. The light transmission structure includes a first doped region; a second doped region doped oppositely to the first region; a lateral junction between a part of the first doped region and a part of the second doped region, the lateral junction oriented substantially perpendicular to the top surface of the substrate; and a vertical junction between a part of the first doped region and a part of the second doped region, the vertical junction oriented substantially parallel to the top surface of the substrate. The first contact is in electrical contact with the first region and the second contact is in electrical contact with the second region.

Claims25

Dependent claims

A device comprising:

a substrate;
a light transmission structure formed of a base layer disposed on a top surface of the substrate and a rib formed on the base layer, the light transmission structure comprising:
a first doped region, a first portion of the first doped region located in the base layer and a second portion of the first doped region located in the rib,
a second doped region, the second region doped oppositely to the first region,
a lateral junction between a part of the first doped region and a part of the second doped region, the lateral junction oriented substantially perpendicular to the top surface of the substrate, and
a vertical junction between a part of the first doped region and a part of the second doped region, the vertical junction oriented substantially parallel to the top surface of the substrate;
a first contact in electrical contact with the first region;
and
a second contact in electrical contact with the second region.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/552,043Filed 1 Sep 2009 · us provisional application
Priority: 6 Sep 2008
Published: US 2010/0060970 A111 Mar 2010
Granted: 3 Apr 2012
Term ends: Not estimatedThe source records don’t support an estimate.

Classification2 codes

G02F 1/025
Based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction: in an optical waveguide structure
G02F
Optical devices or arrangements for the control of light by modification of

Family

Application61/191,094Us provisional application · filed 6 Sep 2008
US 2010/0060970 A1Pre-grant publication · published 11 Mar 2010
US 8,149,493 B2This patent

From the US filing history. Foreign family members aren’t listed.

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