Semiconductor integrated circuit device

A semiconductor integrated circuit device comprising:

• an amplification portion having a first transistor configured to inversely amplify an input signal inputted to a gate and output the inversely amplified input signal from a drain;
• and
• a cascode current source including the first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, and an impedance element,
• the first transistor including a gate and a drain between which the impedance element is connected, and a source connected to a drain of the second transistor,
• the second transistor including a gate connected to a gate of the fourth transistor and a source connected to a reference potential point to supply a bias current to the first transistor,
• the third transistor including a drain which is supplied with a current from a current source and is connected to the gate of the second transistor, and a source connected to a drain of the fourth transistor,
• the fourth transistor including a source connected to a reference potential point,
• the fifth transistor having same characteristics as the first transistor, and including a gate connected to a gate of the third transistor and to a drain of the fifth transistor, and a source connected to a drain of the sixth transistor,
• the sixth transistor having same characteristics as the second transistor, and including a gate connected to the gate of the fourth transistor and a source connected to a reference potential point to supply a bias current to the fifth transistor.