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US 8,148,824 B2Granted
Semiconductor device with through substrate via
AssigneeNanya Technology Corporation
InventorShian-Jyh Lin
Life of this patent
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Abstract
A through substrate via having a low stress is provided. The through substrate via is positioned in a substrate. The through substrate via includes: an outer tube penetrating the substrate; at least one inner tube disposed within the outer tube; a dielectric layer lining on a side wall of the outer tube, and a side wall of the inner tube; a strength-enhanced material filling the inner tube; and a conductive layer filling the outer tube.
Claims7
A semiconductor device with a through substrate via comprising:
- a substrate;
- and
- a through substrate via penetrating the substrate, wherein the through substrate via comprises:
- an outer tube penetrating the substrate;
- at least one inner tube disposed within the outer tube;
- a dielectric layer lining on a side wall of the outer tube, and a side wall of the inner tube;
- a strength-enhanced material filling the inner tube;
- and
- a conductive layer filling the outer tube.
6 more elements
Dependencies are inferred from the claim text.