Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a semiconductor substrate;
• a semiconductor layer formed on the semiconductor substrate;
• an electronic device formed in the semiconductor layer;
• and
• a guard ring formed in the semiconductor layer so as to surround the electronic device in plan view of the semiconductor device,
• wherein the guard ring comprises a plurality of grooves formed in the semiconductor layer so as to surround the electronic device in the plan view of the semiconductor device, an insulating material is deposited in each of the grooves, the depths of the grooves are different from each other, and a first groove of the grooves is formed next to a second groove of the grooves, the electronic device is closer to the first groove than to the second groove, and the first groove is deeper than the second groove.

A semiconductor device comprising:

• a semiconductor substrate;
• a semiconductor layer formed on the semiconductor substrate;
• an electronic device formed in the semiconductor layer;
• and
• a guard ring formed in the semiconductor layer so as to surround the electronic device in plan view of the semiconductor device,
• wherein the guard ring comprises a plurality of grooves formed in the semiconductor layer so as to surround the electronic device in the plan view of the semiconductor device, an insulating material is deposited in each of the grooves, the depths of the grooves are different from each other, and the insulating material fills each of the grooves at least partially so as to cover at least the semiconductor layer in each of the grooves, and extends outside the grooves so as to cover a portion of a top surface of the semiconductor layer.

A method of manufacturing a semiconductor device, comprising:

• forming a semiconductor layer on a semiconductor substrate;
• forming an electronic device in the semiconductor layer;
• forming a plurality of grooves in the semiconductor layer so as to surround the electronic device in plan view of the semiconductor device and to penetrate through the semiconductor layer, the grooves having depths different from each other;
• depositing an insulating material in each of the grooves to form a guard ring comprising the grooves having the insulating material therein;
• and
• dicing the semiconductor substrate and the semiconductor layer along a dicing line provided outside the guard ring,
• wherein a first groove of the grooves is formed next to a second groove of the grooves, the electronic device is closer to the first groove than to the second groove, and the first groove is narrower than the second groove.

A method of manufacturing a semiconductor device, comprising:

• forming a semiconductor layer on a semiconductor substrate;
• forming an electronic device in the semiconductor layer;
• forming a plurality of grooves in the semiconductor layer so as to surround the electronic device in plan view of the semiconductor device, the grooves having depths different from each other;
• depositing an insulating material in each of the grooves to form a guard ring comprising the grooves having the insulating material therein;
• and
• dicing the semiconductor substrate and the semiconductor layer along a dicing line provided outside the guard ring,
• wherein a first groove of the grooves is formed next to a second groove of the grooves, the electronic device is closer to the first groove than to the second groove, and the first groove is deeper than the second groove.

A method of manufacturing a semiconductor device, comprising:

• forming a semiconductor layer on a semiconductor substrate;
• forming an electronic device in the semiconductor layer;
• forming a plurality of grooves in the semiconductor layer so as to surround the electronic device in plan view of the semiconductor device, the grooves having depths different from each other;
• depositing an insulating material in each of the grooves to form a guard ring comprising the grooves having the insulating material therein;
• and
• dicing the semiconductor substrate and the semiconductor layer along a dicing line provided outside the guard ring,
• wherein the insulating material fills each of the grooves at least partially so as to cover at least the semiconductor layer in each of the grooves, and extends outside the grooves so as to cover a portion of a top surface of the semiconductor layer.