Solid-state imaging device, electronic apparatus, and method for manufacturing the same

An electronic apparatus comprising:

• a plurality of photoelectric conversion elements disposed on an imaging surface of a substrate, each of the photoelectric conversion elements receiving light incident on a light receiving surface and performing photoelectric conversion to produce a signal charge;
• a plurality of electrodes interposed between the photoelectric conversion elements arranged on the imaging surface of the substrate;
• and
• a plurality of light blocking portions provided above the plurality of electrodes and interposed between the photoelectric conversion elements arranged on the imaging surface of the substrate,
• wherein each of the light blocking portions includes
• an electrode light blocking portion formed to cover the corresponding electrode, and
• a pixel isolation and light blocking portion protruding convexly from the upper surface of the electrode light blocking portion,
• the plurality of photoelectric conversion elements are arranged at first pitches on the imaging surface,
• the electrode light blocking portions in the plurality of light blocking portions are arranged at second pitches on the imaging surface,
• the pixel isolation and light blocking portions in the plurality of light blocking portions are arranged at third pitches on the imaging surface, and
• at least the third pitch increases with distance from the center toward the periphery of the imaging surface.

A method for manufacturing a solid-state imaging device, the method comprising the steps of:

• forming a plurality of photoelectric conversion elements on an imaging surface of a substrate, each of the photoelectric conversion elements receiving light incident on a light receiving surface and performing photoelectric conversion to produce a signal charge;
• forming a plurality of electrodes interposed between the plurality of photoelectric conversion elements arranged on the imaging surface of the substrate;
• and
• forming a plurality of light blocking portions above the plurality of electrodes and between the plurality of photoelectric conversion elements arranged on the imaging surface of the substrate,
• wherein the step of forming the light blocking portions includes the steps of
• forming an electrode light blocking portion that covers the corresponding electrode, and
• forming a pixel isolation and light blocking portion protruding convexly from the upper surface of the electrode light blocking portion,
• in the step of forming the photoelectric conversion elements, the plurality of photoelectric conversion elements are arranged at first pitches on the imaging surface,
• in the step of forming the electrode light blocking portions, the electrode light blocking portions are arranged at second pitches on the imaging surface, and
• in the step of forming the pixel isolation and light blocking portions, the pixel isolation and light blocking portions are arranged at third pitches on the imaging surface and the third pitch increases with distance from the center toward the periphery of the imaging surface.