Solid-state imaging device and manufacturing method thereof

A method for manufacturing a solid-state imaging device, said method comprising:

• forming, in rows and columns on a semiconductor substrate, a plurality of light-receiving units which convert incident light into signal charge;
• forming a transfer channel in each of the columns for transferring, in a column direction, the signal charge obtained as a result of the conversion by the plurality of light-receiving units in a corresponding one of the columns;
• forming, in a same layer, a plurality of first transfer electrodes and a plurality of second transfer electrodes which alternate above the transfer channel in the column direction;
• forming each of insulating regions above the transfer channel and between one of the plurality of first transfer electrodes and one of the plurality of second transfer electrodes which are adjacent to each other in the column direction;
• forming an antireflection film above the plurality of light-receiving units to prevent reflection of light entering the plurality of light-receiving units and on the insulating regions to cover the insulating regions;
• forming a first wire in each of the rows in a layer upper than the antireflection film, the first wire being electrically connected to a plurality of second transfer electrodes, among the plurality of second transfer electrodes, which are deposited in a corresponding one of the rows;
• and
• forming a light-shielding film in a layer upper than the first wire and the antireflection film, the light-shielding film covering the transfer channel and having an opening above each of the plurality of light-receiving units.