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US 8,148,740 B2Granted
Semiconductor light emitting device and method of manufacturing the same
AssigneeLG Innotek Co., Ltd.
InventorsTae Yun Kim, Hyo Kun Son
Life of this patent
Estimating the term…
Abstract
Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer.
Claims19
A light emitting device, comprising:
- a first conductive type semiconductor layer;
- a second conductive type semiconductor layer;
- and
- an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer,
- wherein the active layer comprises a first active layer, a second active layer, and a first dual barrier layer between the first active layer and the second active layer,
- wherein the first active layer includes at least one period of a first well layer and a first barrier layer,
- wherein the second active layer includes at least one period of a second well layer and a second barrier layer, and
- wherein the first dual barrier layer has a thickness greater than a thickness of the first barrier layer and/or the second barrier layer,
- wherein the first dual barrier layer includes a third barrier layer and a fourth barrier layer between the first active layer and the second active layer.
6 more elements
A light emitting device, comprising:
- a conductive support substrate;
- a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
- and
- a first electrode on the light emitting structure,
- wherein the active layer comprises a first active layer, a second active layer, and a dual barrier layer between the first active layer and the second active layer,
- wherein the dual barrier layer includes a first sub barrier layer and a second sub barrier layer between the first active layer and the second active layer, and
- wherein the dual barrier layer is overlapped with the conductive support substrate and the first electrode.
4 more elements
Dependencies are inferred from the claim text.