Semiconductor device and method for manufacturing semiconductor device

A semiconductor device comprising:

• an island-shaped stack including a first conductive layer over a substrate, a first insulating layer over the first conductive layer, a first semiconductor layer over the first insulating layer, and a second semiconductor layer containing an impurity element having one conductivity type over the first semiconductor layer;
• a sidewall comprising a second insulating layer which is in contact with a side surface of the island-shaped stack including a side surface of the first conductive layer, a side surface of the first insulating layer, a side surface of the first semiconductor layer, and a side surface of the second semiconductor layer;
• and
• a second conductive layer over the island-shaped stack and the sidewall,
• wherein the second conductive layer has a layered structure including at least a transparent conductive layer,
• wherein a part of the transparent conductive layer is a pixel electrode,
• wherein the pixel electrode is in contact with the substrate, and
• wherein the second conductive layer has a region in which the second conductive layer is a single layer of the transparent conductive layer over the island-shaped stack.

A semiconductor device comprising:

• an island-shaped stack including a first conductive layer over a substrate, a first insulating layer over the first conductive layer, a first semiconductor layer over the first insulating layer, and a second semiconductor layer containing an impurity element having one conductivity type over the first semiconductor layer;
• a sidewall comprising a second insulating layer which is in contact with a side surface of the island-shaped stack including a side surface of the first conductive layer, a side surface of the first insulating layer, a side surface of the first semiconductor layer, and a side surface of the second semiconductor layer;
• a second conductive layer over the island-shaped stack and the sidewall;
• and
• a third insulating layer over the second conductive layer,
• wherein the second conductive layer has a layered structure including at least a transparent conductive layer,
• wherein a part of the transparent conductive layer is a pixel electrode,
• wherein the pixel electrode is in contact with the substrate, and
• wherein the second conductive layer has a region in which the second conductive layer is a single layer of the transparent conductive layer over the island-shaped stack.