Light-emitting device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShigeki Komori, Ryu Komatsu
Life of this patent
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Abstract
A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked in this order (a thin-film stacked body); first etching is performed to expose the first conductive film and form at least a pattern of the thin-film stacked body; second etching is performed to form a pattern of the first conductive film. The second etching is performed under a condition in which the first conductive film is side-etched. Further, after forming the patterns, an EL layer can be formed selectively by utilizing a depression and a projection due to the patterns.
Claims12
A light-emitting device comprising:
- a gate electrode layer over an insulating surface;
- a first insulating film over the gate electrode layer;
- a semiconductor layer over the first insulating film;
- an impurity semiconductor film over the semiconductor layer;
- a conductive film over the impurity semiconductor film;
- a second insulating film having a first opening portion over the conductive film;
- a pixel electrode layer over the second insulating film, the pixel electrode layer being in contact with the conductive film through the first opening portion;
- a third insulating film over the pixel electrode layer and including a portion that is closer to the insulating surface than the conductive film and includes a second opening portion;
- an EL layer over the third insulating film, the EL layer being in contact with the pixel electrode layer through the second opening portion;
- a cavity between the gate electrode layer and the second insulating film, and between the first insulating film and the insulating surface.
A light-emitting device comprising:
- a gate electrode layer over an insulating surface;
- a first insulating film over the gate electrode layer;
- a semiconductor layer over the first insulating film;
- a second insulating film having a first opening portion over the semiconductor layer;
- a pixel electrode layer over the second insulating film, the pixel electrode layer being electrically connected to the semiconductor layer through the first opening portion;
- a third insulating film over the pixel electrode layer and including a portion that is closer to the insulating surface than the semiconductor layer and includes a second opening portion;
- an EL layer over the third insulating film, the EL layer being in contact with the pixel electrode layer through the second opening portion;
- a cavity between the gate electrode layer and the second insulating film, and between the first insulating film and the insulating surface.
Dependencies are inferred from the claim text.